Study of Schottky diodes based on ultrawide-band gap semiconductors

Labed, Madani (2022) Study of Schottky diodes based on ultrawide-band gap semiconductors. Doctoral thesis, Université de mohamed kheider biskra.

Text Labed Madani PhD thesis- Final verssion 15-10-2022.pdf Download (6MB)

Abstract

In this thesis, Ni/β-Ga2O3 Schottky barrier diodes (SBDs) deposited by confined magnetic field based sputtering (CMFS) and Electron-beam evaporation (EBE), are modelled using SILVACO-Atlas and compared to experimental measurements. Firstly, Forward and reverse current of CFMS SBDs were studied. A model was developed to understand the role of Ni atoms diffusion in the surface of β-Ga2O3. In this model, Ni out diffusion combines with oxygen to form a new (NixGa1−x)2O3 interfacial layer. This new compound is modelled as a semiconductor with different energy gap and affinity and less defects since Ni diffusion compensates Ga vacancy related defects. A good agreement between simulation and measurement for forward at high and low temperatures and reverse current with the consideration of band-to-band (BBT) and impact ionization for the reverse current. The achieved agreement demonstrates the soundness of the proposed model. In addition, temperature dependent SBD characteristics were studied. At room temperature, the deviation of SBD parameters from the ideal case is due to the effect of interfacial states due to plasma and Ar bombardment. It was found that the Schottky barrier height (

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