Investigation of solar cell devices based on Indium Gallium Nitride (InGaN) ternary alloy.

Benslim, Amina (2022) Investigation of solar cell devices based on Indium Gallium Nitride (InGaN) ternary alloy. Doctoral thesis, Université de mohamed kheider biskra.

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Abstract

The indium gallium nitride (InGaN) alloy offer a great possibility of designing and fabricating ultra-high efficiency solar cells due to its wide range of direct band gaps, strong absorption and other optoelectronic properties. This work is numerical simulation using Silvaco Atlas software to study InGaN-based Schottky barrier solar cell. First, we focused on the suitable parameters including the indium composition

Item Type: Thesis (Doctoral)
Uncontrolled Keywords: InGaN alloy, Solar cell, Numerical modeling, Conversion efficiency
Subjects: Q Science > QC Physics
Divisions: Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie > Département des Sciences de la Matière
Depositing User: BFSE
Date Deposited: 13 Nov 2022 09:44
Last Modified: 13 Nov 2022 09:44
URI: http://thesis.univ-biskra.dz/id/eprint/5873

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