Modeling the response of channel-substrate interface traps to the ixcitation of the substrate of GaAs MESFETs

Abdeslam, Noura Amel (2004) Modeling the response of channel-substrate interface traps to the ixcitation of the substrate of GaAs MESFETs. Masters thesis, Université Mohamed Khider - Biskra.

[img]
Preview
Text
Mémoire_2004.pdf

Download (219kB) | Preview
[img]
Preview
Text
Introduction.pdf

Download (105kB) | Preview
[img]
Preview
Text
chapitre 01.pdf

Download (615kB) | Preview
[img]
Preview
Text
chapitre 02.pdf

Download (900kB) | Preview
[img]
Preview
Text
chapitre 03.pdf

Download (320kB) | Preview
[img]
Preview
Text
chapitre 04-1.pdf

Download (2MB) | Preview
[img]
Preview
Text
Conclusion.pdf

Download (99kB) | Preview
[img]
Preview
Text
appendix.A.pdf

Download (160kB) | Preview
[img]
Preview
Text
appendix.B.pdf

Download (149kB) | Preview
[img]
Preview
Text
References.pdf

Download (111kB) | Preview
[img] Text
Contents.doc

Download (34kB)
[img]
Preview
Text
Contents.pdf

Download (145kB) | Preview

Abstract

The backgating (or sidegating) phenomenon observed in n-channel GaAs FETs is simulated with the finite difference method by introducing deep levels (donors, acceptors) to the substrate which is initially n or p type. It is observed that if the substrate is initially slightly p-type and contains deep acceptors then the channel-substrate interface can be regarded as a simple n-p junction. The current in the substrate is dominated by the generation component, which saturate because of saturation velocity. The substrate in this case can be regarded as a relaxation like semiconductor. A threshold voltage in the channel conductance is not observed in this case. If the substrate is initially slightly n-type compensated by deep acceptors, then the substrate current has a space charge, trap fill, type of current. In this case the substrate becomes semi-insulating (good relaxation material ) and the diode cannot be regarded as a simple n-p junction. There is a threshold for backgating if the substrate contains a high donors density. But this does not necessarily coincide with the onset of TFL current which depends on the types and energy level of traps; on thickness of the substrate; and the deep acceptor and donors density and the substrate type.

Item Type: Thesis (Masters)
Subjects: Q Science > QC Physics
Divisions: Faculté des Sciences Exactes et des Sciences de la Nature et de la Vie > Département des Sciences de la Matière
Depositing User: Admin01 TMLBiskra
Date Deposited: 17 Apr 2016 10:05
Last Modified: 17 Apr 2016 10:05
URI: http://thesis.univ-biskra.dz/id/eprint/2395

Actions (login required)

View Item View Item